SEMICONDUCTOR PHYSICS

Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

Zhao Jianzhi, Lin Zhaojun, Corrigan T D, Zhang Yu, Li Huijun and Wang Zhanguo

+ Author Affiliations

PDF

Abstract: The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs). Current–voltage (I–V) characteristics for ungated AlGaN/GaN heterostructures and capacitance–voltage (C–V) characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.

Key words: AlGaN/GaN heterostructure anneal ohmic contact metals 2DEG electron mobility

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4118 Times PDF downloads: 1813 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 04 June 2009 Online: Published: 01 October 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Jianzhi, Lin Zhaojun, Corrigan T D, Zhang Yu, Li Huijun, Wang Zhanguo. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J]. Journal of Semiconductors, 2009, 30(10): 102003. doi: 10.1088/1674-4926/30/10/102003 Zhao J Z, Lin Z J, Corrigan T D, Zhang Y, Li H J, Wang Z G. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J]. J. Semicond., 2009, 30(10): 102003. doi: 10.1088/1674-4926/30/10/102003.Export: BibTex EndNote
      Citation:
      Zhao Jianzhi, Lin Zhaojun, Corrigan T D, Zhang Yu, Li Huijun, Wang Zhanguo. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J]. Journal of Semiconductors, 2009, 30(10): 102003. doi: 10.1088/1674-4926/30/10/102003

      Zhao J Z, Lin Z J, Corrigan T D, Zhang Y, Li H J, Wang Z G. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J]. J. Semicond., 2009, 30(10): 102003. doi: 10.1088/1674-4926/30/10/102003.
      Export: BibTex EndNote

      Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

      doi: 10.1088/1674-4926/30/10/102003
      • Received Date: 2015-08-18
      • Accepted Date: 2008-11-11
      • Revised Date: 2009-06-04
      • Published Date: 2009-09-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return