| Citation: |
Cao Yuxiong, Jin Zhi, Ge Ji, Su Yongbo, Liu Xinyu. A symbolically defined InP double heterojunction bipolar transistor large-signal model[J]. Journal of Semiconductors, 2009, 30(12): 124006. doi: 10.1088/1674-4926/30/12/124006
Cao Y X, Jin Z, Ge J, Su Y B, Liu X Y. A symbolically defined InP double heterojunction bipolar transistor large-signal model[J]. J. Semicond., 2009, 30(12): 124006. doi: 10.1088/1674-4926/30/12/124006.
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A symbolically defined InP double heterojunction bipolar transistor large-signal model
doi: 10.1088/1674-4926/30/12/124006
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Abstract
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.-
Keywords:
- InP DHBT,
- large-signal model,
- SDD
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References
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