SEMICONDUCTOR INTEGRATED CIRCUITS

A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB

Zheng Renliang, Ren Junyan, Li Wei and Li Ning

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Abstract: A fully integrated low power RF transmitter for a WiMedia 3.1–4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between –10.7 and –3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18 μm RF CMOS process with an area of 1.74 mm2 and only consumes 32 mA current (at 1.8 V) including the test associated parts.

Key words: multilband orthogonal frequency division multiplexing (MB-OFDM)

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    Received: 18 August 2015 Revised: 28 July 2009 Online: Published: 01 December 2009

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      Zheng Renliang, Ren Junyan, Li Wei, Li Ning. A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB[J]. Journal of Semiconductors, 2009, 30(12): 125003. doi: 10.1088/1674-4926/30/12/125003 Zheng R L, Ren J Y, Li W, Li N. A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB[J]. J. Semicond., 2009, 30(12): 125003. doi: 10.1088/1674-4926/30/12/125003.Export: BibTex EndNote
      Citation:
      Zheng Renliang, Ren Junyan, Li Wei, Li Ning. A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB[J]. Journal of Semiconductors, 2009, 30(12): 125003. doi: 10.1088/1674-4926/30/12/125003

      Zheng R L, Ren J Y, Li W, Li N. A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB[J]. J. Semicond., 2009, 30(12): 125003. doi: 10.1088/1674-4926/30/12/125003.
      Export: BibTex EndNote

      A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB

      doi: 10.1088/1674-4926/30/12/125003
      • Received Date: 2015-08-18
      • Accepted Date: 2009-05-20
      • Revised Date: 2009-07-28
      • Published Date: 2009-12-04

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