| Citation: |
Zhang Xiaoling, Li Fei, Lu Changzhi, Xie Xuesong, Li Ying, Mohammad S N. High-temperature characteristics of AlxGa1–xN/GaN Schottky diodes[J]. Journal of Semiconductors, 2009, 30(3): 034001. doi: 10.1088/1674-4926/30/3/034001
Zhang X L, Li F, Lu C Z, Xie X S, Li Y, Mohammad S N. High-temperature characteristics of AlxGa1–xN/GaN Schottky diodes[J]. J. Semicond., 2009, 30(3): 034001. doi: 10.1088/1674-4926/30/3/034001.
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High-temperature characteristics of AlxGa1–xN/GaN Schottky diodes
doi: 10.1088/1674-4926/30/3/034001
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Abstract
High-temperature characteristics of the metal/AlxGa1–xN/GaN M/S/S (M/S/S) diodes have been studied with current–voltage (I–V) and capacitance–voltage (C–V) measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1–xN/GaN interface, the AlxGa1–xN/GaN diodes show properties distinctly different from those of the AlxGa1–xN diodes. For the AlxGa1–xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AlxGa1–xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse break-down voltage are superior for the AlxGa1–xN/GaN diodes to those for the AlxGa1–xN diodes. -
Keywords:
- Schottky diodes,
- AlGaN/ GaN,
- high-temperature
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References
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Proportional views
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