SEMICONDUCTOR PHYSICS

Unipolar resistive switching of Au+-implanted ZrO2 films

Liu Qi, Long Shibing, Guan Weihua, Zhang Sen, Liu Ming and Chen Junning

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Abstract: The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted-ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted-ZrO2/n+-Si structure shows good retention char-acteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.

Key words: RRAM

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    Received: 18 August 2015 Revised: 13 December 2008 Online: Published: 01 April 2009

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      Liu Qi, Long Shibing, Guan Weihua, Zhang Sen, Liu Ming, Chen Junning. Unipolar resistive switching of Au+-implanted ZrO2 films[J]. Journal of Semiconductors, 2009, 30(4): 042001. doi: 10.1088/1674-4926/30/4/042001 Liu Q, Long S B, Guan W H, Zhang S, Liu M, Chen J N. Unipolar resistive switching of Au+-implanted ZrO2 films[J]. J. Semicond., 2009, 30(4): 042001. doi: 10.1088/1674-4926/30/4/042001.Export: BibTex EndNote
      Citation:
      Liu Qi, Long Shibing, Guan Weihua, Zhang Sen, Liu Ming, Chen Junning. Unipolar resistive switching of Au+-implanted ZrO2 films[J]. Journal of Semiconductors, 2009, 30(4): 042001. doi: 10.1088/1674-4926/30/4/042001

      Liu Q, Long S B, Guan W H, Zhang S, Liu M, Chen J N. Unipolar resistive switching of Au+-implanted ZrO2 films[J]. J. Semicond., 2009, 30(4): 042001. doi: 10.1088/1674-4926/30/4/042001.
      Export: BibTex EndNote

      Unipolar resistive switching of Au+-implanted ZrO2 films

      doi: 10.1088/1674-4926/30/4/042001
      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-05
      • Revised Date: 2008-12-13
      • Published Date: 2009-04-07

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