SEMICONDUCTOR MATERIALS

Optical properties in 1D photonic crystal structure using Si/C60 multilayers

Chen Jing, Tang Jiyu, Han Peide and Chen Junfang

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Abstract: The feasibility of using Si/C60 multilayer films as one-dimensional (1D) photonic band gap crystals was investigated by theoretical calculations using a transfer matrix method (TMM). The response has been studied both within and out of the periodic plane of Si/C60 multilayers. It is found that Si/C60 multilayer films show incomplete photonic band gap (PBG) behavior in the visible frequency range. The fabricated Si/C60 multilayers with two pairs of 70 nm C60 and 30 nm Si layers exhibit a PBG at central wavelength of about 600 nm, and the highest reflectivity can reach 99%. As a consequence, this photonic crystal may be important for fabricating a photonic crystal with an incomplete band gap in the visible frequency range.

Key words: fullerene Si multilayer films photonic band gap TMM method

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    Received: 18 August 2015 Revised: 29 October 2008 Online: Published: 01 April 2009

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      Chen Jing, Tang Jiyu, Han Peide, Chen Junfang. Optical properties in 1D photonic crystal structure using Si/C60 multilayers[J]. Journal of Semiconductors, 2009, 30(4): 043001. doi: 10.1088/1674-4926/30/4/043001 Chen J, Tang J Y, Han P D, Chen J F. Optical properties in 1D photonic crystal structure using Si/C60 multilayers[J]. J. Semicond., 2009, 30(4): 043001. doi:  10.1088/1674-4926/30/4/043001.Export: BibTex EndNote
      Citation:
      Chen Jing, Tang Jiyu, Han Peide, Chen Junfang. Optical properties in 1D photonic crystal structure using Si/C60 multilayers[J]. Journal of Semiconductors, 2009, 30(4): 043001. doi: 10.1088/1674-4926/30/4/043001

      Chen J, Tang J Y, Han P D, Chen J F. Optical properties in 1D photonic crystal structure using Si/C60 multilayers[J]. J. Semicond., 2009, 30(4): 043001. doi:  10.1088/1674-4926/30/4/043001.
      Export: BibTex EndNote

      Optical properties in 1D photonic crystal structure using Si/C60 multilayers

      doi: 10.1088/1674-4926/30/4/043001
      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-15
      • Revised Date: 2008-10-29
      • Published Date: 2009-04-07

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