J. Semicond. > 2009, Volume 30 > Issue 4 > 043002, doi: 10.1088/1674-4926/30/4/043002
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SEMICONDUCTOR MATERIALS

Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films

Zhou Xiaowei, Li Peixian, Xu Shengrui and Hao Yue

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Abstract: The growth of high-performance Mg-doped p-type AlxGa1-xN (x = 0.2) using metal-organic chemical vapor deposition is reported. The influence of growth conditions (growth temperature, magnesium flow, and thermal annealing temperature) on the electrical properties of Mg-doped p-type AlxGa1-xN (x = 0.2) has been investigated. Using the optimized conditions, we obtained a minimum p-type resistivity of 0.71 Ω·cm for p-type AlGaN with 20% Al fraction.

Key words: p-type AlGaN,  thermal annealing,  resistivity

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    Received: 18 August 2015 Revised: 28 January 2009 Online: Published: 01 April 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(4): 043002
      Zhou Xiaowei, Li Peixian, Xu Shengrui, Hao Yue. Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films[J]. Journal of Semiconductors, 2009, 30(4): 043002. doi: 10.1088/1674-4926/30/4/043002 Zhou X W, Li P X, Xu S R, Hao Y. Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films[J]. J. Semicond., 2009, 30(4): 043002. doi:  10.1088/1674-4926/30/4/043002.Export: BibTex EndNote
      Citation:
      Zhou Xiaowei, Li Peixian, Xu Shengrui, Hao Yue. Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films[J]. Journal of Semiconductors, 2009, 30(4): 043002. doi: 10.1088/1674-4926/30/4/043002

      Zhou X W, Li P X, Xu S R, Hao Y. Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films[J]. J. Semicond., 2009, 30(4): 043002. doi:  10.1088/1674-4926/30/4/043002.
      Export: BibTex EndNote
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      Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films

      doi: 10.1088/1674-4926/30/4/043002

      • Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-12-04
      • Revised Date: 2009-01-28
      • Published Date: 2009-04-07

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