SEMICONDUCTOR PHYSICS

Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

Zhuo Shiyi, Xiong Yuying and Gu Min

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Abstract: ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency mag-netron sputtering on Si (111) substrates, with targets of ZnO and Zn0.99Cu0.01, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Znidefect in the films, and the valence state of Cu is 1+. The X-ray diffrac-tion measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along thec-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.

Key words: RF magnetron sputtering

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    Received: 18 August 2015 Revised: 11 January 2009 Online: Published: 01 May 2009

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      Zhuo Shiyi, Xiong Yuying, Gu Min. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(5): 052004. doi: 10.1088/1674-4926/30/5/052004 Zhuo S Y, Xiong Y Y, Gu M. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering[J]. J. Semicond., 2009, 30(5): 052004. doi: 10.1088/1674-4926/30/5/052004.Export: BibTex EndNote
      Citation:
      Zhuo Shiyi, Xiong Yuying, Gu Min. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(5): 052004. doi: 10.1088/1674-4926/30/5/052004

      Zhuo S Y, Xiong Y Y, Gu M. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering[J]. J. Semicond., 2009, 30(5): 052004. doi: 10.1088/1674-4926/30/5/052004.
      Export: BibTex EndNote

      Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

      doi: 10.1088/1674-4926/30/5/052004
      • Received Date: 2015-08-18
      • Accepted Date: 2008-12-09
      • Revised Date: 2009-01-11
      • Published Date: 2009-04-20

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