SEMICONDUCTOR MATERIALS

Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

Chen Huimin, Guo Fuqiang and Zhang Baohua

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Abstract: CdTe nanocrystalline thin films have been prepared on glass, Si and Al2O3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were charac-terized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examina-tions revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al2O3. FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

Key words: CdTe

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    Received: 18 August 2015 Revised: 29 December 2008 Online: Published: 01 May 2009

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      Chen Huimin, Guo Fuqiang, Zhang Baohua. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering[J]. Journal of Semiconductors, 2009, 30(5): 053001. doi: 10.1088/1674-4926/30/5/053001 Chen H M, Guo F Q, Zhang B H. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering[J]. J. Semicond., 2009, 30(5): 053001. doi: 10.1088/1674-4926/30/5/053001.Export: BibTex EndNote
      Citation:
      Chen Huimin, Guo Fuqiang, Zhang Baohua. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering[J]. Journal of Semiconductors, 2009, 30(5): 053001. doi: 10.1088/1674-4926/30/5/053001

      Chen H M, Guo F Q, Zhang B H. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering[J]. J. Semicond., 2009, 30(5): 053001. doi: 10.1088/1674-4926/30/5/053001.
      Export: BibTex EndNote

      Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

      doi: 10.1088/1674-4926/30/5/053001
      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-06
      • Revised Date: 2008-12-29
      • Published Date: 2009-04-20

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