SEMICONDUCTOR MATERIALS

Temperature: a critical parameter affecting the optical properties of porous silicon

Long Yongfu, Ge Jin, Ding Xunmin and Hou Xiaoyuan

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Abstract: The optical properties of porous silicon (PS) samples fabricated by pulse etching in a temperature range from -40 to 50 ℃ have been investigated using reflectance spectroscopy, photoluminescence spectroscopy, and scanning electron microscopy (SEM). The dependence of the optical parameters, such as the refractive index n and the optical thickness (nd) of PS samples, on the etching temperature has been analyzed in detail. As the etching temperature decreases, n decreases, indicating a higher porosity, and the physical thickness of PS samples also decreases. Meanwhile, the reflectance spectra exhibit a more intense interference band and the interfaces are smoother. In addition, the intensity of the PL emission spectra is dramatically increased.

Key words: porous silicon

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    Received: 18 August 2015 Revised: 02 April 2009 Online: Published: 01 June 2009

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      Long Yongfu, Ge Jin, Ding Xunmin, Hou Xiaoyuan. Temperature: a critical parameter affecting the optical properties of porous silicon[J]. Journal of Semiconductors, 2009, 30(6): 063002. doi: 10.1088/1674-4926/30/6/063002 Long Y F, Ge J, Ding X M, Hou X Y. Temperature: a critical parameter affecting the optical properties of porous silicon[J]. J. Semicond., 2009, 30(6): 063002. doi:  10.1088/1674-4926/30/6/063002.Export: BibTex EndNote
      Citation:
      Long Yongfu, Ge Jin, Ding Xunmin, Hou Xiaoyuan. Temperature: a critical parameter affecting the optical properties of porous silicon[J]. Journal of Semiconductors, 2009, 30(6): 063002. doi: 10.1088/1674-4926/30/6/063002

      Long Y F, Ge J, Ding X M, Hou X Y. Temperature: a critical parameter affecting the optical properties of porous silicon[J]. J. Semicond., 2009, 30(6): 063002. doi:  10.1088/1674-4926/30/6/063002.
      Export: BibTex EndNote

      Temperature: a critical parameter affecting the optical properties of porous silicon

      doi: 10.1088/1674-4926/30/6/063002
      • Received Date: 2015-08-18
      • Accepted Date: 2008-12-21
      • Revised Date: 2009-04-02
      • Published Date: 2009-07-13

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