| Citation: |
Liu Yanbo, Zhang Ting, Niu Xiaoming, Song Zhitang, Min Guoquan, Zhang Jing, Zhou Weimin, Wan Yongzhong, Zhang Jianping, Li Xiaoli, Feng Songlin. Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip[J]. Journal of Semiconductors, 2009, 30(6): 063003. doi: 10.1088/1674-4926/30/6/063003
Liu Y B, Zhang T, Niu X M, Song Z T, Min G Q, Zhang J, Zhou W M, Wan Y Z, Zhang J P, Li X L, Feng S L. Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip[J]. J. Semicond., 2009, 30(6): 063003. doi: 10.1088/1674-4926/30/6/063003.
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Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip
doi: 10.1088/1674-4926/30/6/063003
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Abstract
The Si2Sb2Te5 phase change material has been studied by applying a nano-tip (30 nm in diameter) on an atomic force microscopy system. Memory switching from a high resistance state to a low resistance state has been achieved, with a resistance change of about 1000 times. In a typical I–V curve, the current increases significantly after the voltage exceeds ~4.3 V. The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements. The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.-
Keywords:
- phase change,
- electrical probe storage,
- Si2Sb2Te5
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References
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Proportional views
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