| Citation: |
Sun Lu, Wang Jiali, Wang Shan, Li Xuezheng, Shi Hui, Wang Na, Guo Shengping. Large-signal modeling method for power FETs and diodes[J]. Journal of Semiconductors, 2009, 30(6): 064003. doi: 10.1088/1674-4926/30/6/064003
Sun L, Wang J L, Wang S, Li X Z, Shi H, Wang N, Guo S P. Large-signal modeling method for power FETs and diodes[J]. J. Semicond., 2009, 30(6): 064003. doi: 10.1088/1674-4926/30/6/064003.
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Large-signal modeling method for power FETs and diodes
doi: 10.1088/1674-4926/30/6/064003
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Abstract
Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits. -
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