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Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

Yu Bo, Wang Yuan, Jia Song and Zhang Ganggang

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Abstract: This paper presents a novel mixed-voltage I/O buffer without an extra dual-oxide CMOS process. This mixed-voltage I/O buffer with a simplified circuit scheme can overcome the problems of leakage current and gate-oxide reliability that the conventional CMOS I/O buffer has. The design is realized in a 0.13-μm CMOS process and the simulation results show a good performance increased by ~34% with respect to the product of power consumption and speed.

Key words: mixed-voltage I/O buffer multi-power domain thin-oxide CMOS

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    Received: 18 August 2015 Revised: 06 March 2009 Online: Published: 01 July 2009

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      Yu Bo, Wang Yuan, Jia Song, Zhang Ganggang. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. Journal of Semiconductors, 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001 Yu B, Wang Y, Jia S, Zhang G G. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. J. Semicond., 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001.Export: BibTex EndNote
      Citation:
      Yu Bo, Wang Yuan, Jia Song, Zhang Ganggang. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. Journal of Semiconductors, 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001

      Yu B, Wang Y, Jia S, Zhang G G. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. J. Semicond., 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001.
      Export: BibTex EndNote

      Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

      doi: 10.1088/1674-4926/30/7/075001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-01-13
      • Revised Date: 2009-03-06
      • Published Date: 2009-07-10

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