SEMICONDUCTOR INTEGRATED CIRCUITS

Effect of a reset-MOSFET in a high-speed comparator

Liu Haitao, Meng Qiao, Wang Zhigong and Tang Kai

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Abstract: A high-speed comparator design based on regeneration architecture, which can be used in a flash ADC, is presented. A threshold-limit-speed effect (TLSE) which limits the speed of the comparator was discovered and studied in detail. The size of the reset-MOSFET was optimized to resolve the TLSE and make the comparator work at the maximal speed. The results were confirmed by simulation and the corresponding circuit was realized in a flash ADC design in SMIC 0.18-μm CMOS technology. The test result shows that the comparator can work well at 2 GHz and can even work up to 2.8 GHz while the power dissipation is 3.2 mW.

Key words: comparator high speed TLSE CMOS ADC

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    Received: 18 August 2015 Revised: 20 February 2009 Online: Published: 01 July 2009

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      Liu Haitao, Meng Qiao, Wang Zhigong, Tang Kai. Effect of a reset-MOSFET in a high-speed comparator[J]. Journal of Semiconductors, 2009, 30(7): 075002. doi: 10.1088/1674-4926/30/7/075002 Liu H T, Meng Q, Wang Z G, Tang K. Effect of a reset-MOSFET in a high-speed comparator[J]. J. Semicond., 2009, 30(7): 075002. doi: 10.1088/1674-4926/30/7/075002.Export: BibTex EndNote
      Citation:
      Liu Haitao, Meng Qiao, Wang Zhigong, Tang Kai. Effect of a reset-MOSFET in a high-speed comparator[J]. Journal of Semiconductors, 2009, 30(7): 075002. doi: 10.1088/1674-4926/30/7/075002

      Liu H T, Meng Q, Wang Z G, Tang K. Effect of a reset-MOSFET in a high-speed comparator[J]. J. Semicond., 2009, 30(7): 075002. doi: 10.1088/1674-4926/30/7/075002.
      Export: BibTex EndNote

      Effect of a reset-MOSFET in a high-speed comparator

      doi: 10.1088/1674-4926/30/7/075002
      • Received Date: 2015-08-18
      • Accepted Date: 2008-12-30
      • Revised Date: 2009-02-20
      • Published Date: 2009-07-10

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