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Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode

Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, Lü Bin, Lü Jianguo, Wang Lei, Jin Yizheng, Jiang Jie, Xue Ya, Zhang Jun, Lin Shisheng and Yang Dan

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Abstract: p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode (LED) was produced on n-ZnO (0001) single-crystal substrate using pulsed laser deposition. The realization of band gap engineering was achieved by the incorporation of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO:Na film with low resistance was obtained at 500 ℃ and in which, Na has taken effect evidenced by Hall and X-ray photoelectron spectroscopy measurements. The currentvoltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well.

Key words: ZnO electroluminescence Na doped LED

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    Received: 18 August 2015 Revised: Online: Published: 01 August 2009

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      Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, Lü Bin, Lü Jianguo, Wang Lei, Jin Yizheng, Jiang Jie, Xue Ya, Zhang Jun, Lin Shisheng, Yang Dan. Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J]. Journal of Semiconductors, 2009, 30(8): 081001. doi: 10.1088/1674-4926/30/8/081001 Ye Z Z, Zhang L Q, Huang J Y, Zhang Y Z, Zhu L P, Lü B, Lü J, Wang L, Jin Y Z, Jiang J, Xue Y, Zhang J, Lin S S, Yang D. Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J]. J. Semicond., 2009, 30(8): 081001. doi:  10.1088/1674-4926/30/8/081001.Export: BibTex EndNote
      Citation:
      Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, Lü Bin, Lü Jianguo, Wang Lei, Jin Yizheng, Jiang Jie, Xue Ya, Zhang Jun, Lin Shisheng, Yang Dan. Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J]. Journal of Semiconductors, 2009, 30(8): 081001. doi: 10.1088/1674-4926/30/8/081001

      Ye Z Z, Zhang L Q, Huang J Y, Zhang Y Z, Zhu L P, Lü B, Lü J, Wang L, Jin Y Z, Jiang J, Xue Y, Zhang J, Lin S S, Yang D. Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J]. J. Semicond., 2009, 30(8): 081001. doi:  10.1088/1674-4926/30/8/081001.
      Export: BibTex EndNote

      Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode

      doi: 10.1088/1674-4926/30/8/081001
      • Received Date: 2015-08-18

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