SEMICONDUCTOR MATERIALS

NTC and electrical properties of nickel and gold doped n-type silicon material

Dong Maojin, Chen Zhaoyang, Fan Yanwei, Wang Junhua, Tao Mingde and Cong Xiuyun

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Abstract: Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 , a material with high B-value and low electrical resistivity is obtained. The BT and RT change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.

Key words: deep level impurities nickel gold NTC electrical properties

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    Received: 18 August 2015 Revised: 17 March 2009 Online: Published: 01 August 2009

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      Dong Maojin, Chen Zhaoyang, Fan Yanwei, Wang Junhua, Tao Mingde, Cong Xiuyun. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. Journal of Semiconductors, 2009, 30(8): 083007. doi: 10.1088/1674-4926/30/8/083007 Dong M J, Chen Z Y, Fan Y W, Wang J H, Tao M D, Cong X Y. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. J. Semicond., 2009, 30(8): 083007. doi:  10.1088/1674-4926/30/8/083007.Export: BibTex EndNote
      Citation:
      Dong Maojin, Chen Zhaoyang, Fan Yanwei, Wang Junhua, Tao Mingde, Cong Xiuyun. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. Journal of Semiconductors, 2009, 30(8): 083007. doi: 10.1088/1674-4926/30/8/083007

      Dong M J, Chen Z Y, Fan Y W, Wang J H, Tao M D, Cong X Y. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. J. Semicond., 2009, 30(8): 083007. doi:  10.1088/1674-4926/30/8/083007.
      Export: BibTex EndNote

      NTC and electrical properties of nickel and gold doped n-type silicon material

      doi: 10.1088/1674-4926/30/8/083007
      • Received Date: 2015-08-18
      • Accepted Date: 2008-12-21
      • Revised Date: 2009-03-17
      • Published Date: 2009-07-31

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