| Citation: |
Hu Aibin, Wang Wenwu, Xu Qiuxia. (NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights[J]. Journal of Semiconductors, 2009, 30(8): 084001. doi: 10.1088/1674-4926/30/8/084001
Hu A B, Wang W W, Xu Q X. (NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights[J]. J. Semicond., 2009, 30(8): 084001. doi: 10.1088/1674-4926/30/8/084001.
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(NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights
doi: 10.1088/1674-4926/30/8/084001
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Abstract
The effect of Si (100) surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by (NH4)2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si surface atoms were chemically bonded with S atoms after Si surface treatment in NH4OH and (NH4)2S mixing solution. This induces a more ideal value for the Schottky barrier height compared with a diode treated only by HF solution, indicating that surface states originating from dangling bonds are passivated with S atoms. -
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