| Citation: |
Fu Xiaojun, Zhang Haiying, Guo Changxin, Xu Jingbo, Li Ming. Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors[J]. Journal of Semiconductors, 2009, 30(8): 084002. doi: 10.1088/1674-4926/30/8/084002
Fu X J, Zhang H Y, Guo C X, Xu J B, Li M. Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors[J]. J. Semicond., 2009, 30(8): 084002. doi: 10.1088/1674-4926/30/8/084002.
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Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors
doi: 10.1088/1674-4926/30/8/084002
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Abstract
The fabrication and photoelectrical characteristics of suspended ZnO nanowire (NW) field-effect transistors(FETs) are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds = 2.5 V, the peak transconductance of the FETs is 0.396 µS, the average electron mobility is 50.17 cm2/(V·s), the resistivity is 0.96 × 102 Ω·cm at Vgs = 0 V, and the current on/off ratio (IonIoff) is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation (2.5 µW/cm2) exhibit punchthrough and threshold voltage (Vth) shift (from –0.6 V to +0.7 V) and a decrease by almost half of the source–drain current (Ids, from 560 nA to 320 nA) due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.-
Keywords:
- ZnO nanowire
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