SEMICONDUCTOR DEVICES

Noise performance in AlGaN/GaN HEMTs under high drain bias

Pang Lei, Pu Yan, Liu Xinyu, Wang Liang and Liu Jian

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Abstract: The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe selfheating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias.

Key words: GaN HEMT noise performance high drain bias high electric field impact ionization

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    Received: 18 August 2015 Revised: 01 April 2009 Online: Published: 01 August 2009

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      Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Liu Jian. Noise performance in AlGaN/GaN HEMTs under high drain bias[J]. Journal of Semiconductors, 2009, 30(8): 084004. doi: 10.1088/1674-4926/30/8/084004 Pang L, Pu Y, Liu X Y, Wang L, Liu J. Noise performance in AlGaN/GaN HEMTs under high drain bias[J]. J. Semicond., 2009, 30(8): 084004. doi:  10.1088/1674-4926/30/8/084004.Export: BibTex EndNote
      Citation:
      Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Liu Jian. Noise performance in AlGaN/GaN HEMTs under high drain bias[J]. Journal of Semiconductors, 2009, 30(8): 084004. doi: 10.1088/1674-4926/30/8/084004

      Pang L, Pu Y, Liu X Y, Wang L, Liu J. Noise performance in AlGaN/GaN HEMTs under high drain bias[J]. J. Semicond., 2009, 30(8): 084004. doi:  10.1088/1674-4926/30/8/084004.
      Export: BibTex EndNote

      Noise performance in AlGaN/GaN HEMTs under high drain bias

      doi: 10.1088/1674-4926/30/8/084004
      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-10
      • Revised Date: 2009-04-01
      • Published Date: 2009-07-31

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