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Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory

Shi Weihua, Hong Zhiliang, Hu Chaohong and Kang Yong

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Abstract: This paper presents an implementation for improving muti-level cell NOR flash memory program throughput based on the channel hot electron (CHE) temperature characteristic. The CHE Ig temperature characteristic is analyzed theoretically with the Lucky electron model, and a temperature self-adaptive programming algorithm is proposed to increase Ig according to the on-die temperature. Experimental results show that the program throughput increases significantly from 1.1 MByte/s without temperature self-adaptive programming to 1.4 MByte/s with the proposed method at room temperature. This represents a 30% improvement and is 70 times faster than the program throughput in Ref. [1].

Key words: temperature self-adaptive programming; 65 nm multi-level cell flash memory; program throughput

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    Received: 18 August 2015 Revised: 27 March 2009 Online: Published: 01 August 2009

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      Shi Weihua, Hong Zhiliang, Hu Chaohong, Kang Yong. Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory[J]. Journal of Semiconductors, 2009, 30(8): 085012. doi: 10.1088/1674-4926/30/8/085012 Shi W H, Hong Z L, Hu C H, Kang Y. Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory[J]. J. Semicond., 2009, 30(8): 085012. doi:  10.1088/1674-4926/30/8/085012.Export: BibTex EndNote
      Citation:
      Shi Weihua, Hong Zhiliang, Hu Chaohong, Kang Yong. Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory[J]. Journal of Semiconductors, 2009, 30(8): 085012. doi: 10.1088/1674-4926/30/8/085012

      Shi W H, Hong Z L, Hu C H, Kang Y. Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory[J]. J. Semicond., 2009, 30(8): 085012. doi:  10.1088/1674-4926/30/8/085012.
      Export: BibTex EndNote

      Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory

      doi: 10.1088/1674-4926/30/8/085012
      • Received Date: 2015-08-18
      • Accepted Date: 2008-12-31
      • Revised Date: 2009-03-27
      • Published Date: 2009-07-31

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