SEMICONDUCTOR MATERIALS

Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

Duan Huantao, Hao Yue and Zhang Jincheng

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Abstract: The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia (IASA) method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.

Key words: metal-organic vaporphase epitaxy

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    Received: 18 August 2015 Revised: 15 April 2009 Online: Published: 01 September 2009

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      Duan Huantao, Hao Yue, Zhang Jincheng. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. Journal of Semiconductors, 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001 Duan H T, Hao Y, Zhang J C. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. J. Semicond., 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001.Export: BibTex EndNote
      Citation:
      Duan Huantao, Hao Yue, Zhang Jincheng. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. Journal of Semiconductors, 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001

      Duan H T, Hao Y, Zhang J C. Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J]. J. Semicond., 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001.
      Export: BibTex EndNote

      Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

      doi: 10.1088/1674-4926/30/9/093001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-18
      • Revised Date: 2009-04-15
      • Published Date: 2009-08-28

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