SEMICONDUCTOR MATERIALS

Fabrication of strained Ge film using a thin SiGe virtual substrate

Guo Lei, Zhao Shuo, Wang Jing, Liu Zhihong and Xu Jun

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Abstract: This paper describes a method using both reduced pressure chemical vapor deposition (RPCVD) and ultrahigh vacuum chemical vapor deposition (UHVCVD) to grow a thin compressively strained Ge film. As the first step, low temperature RPCVD was used to grow a fully relaxed SiGe virtual substrate layer at 500 ℃ with a thickness of 135 nm, surface roughness of 0.3 nm, and Ge content of 77%. Then, low temperature UHVCVD was used to grow a high quality strained pure Ge film on the SiGe virtual substrate at 300 ℃ with a thickness of 9 nm, surface roughness of 0.4 nm, and threading dislocation density of ~105 cm2. Finally, a very thin strained Si layer of 1.5–2 nm thickness was grown on the Ge layer at 550 ℃ for the purpose of passivation and protection. The whole epitaxial layer thickness is less than 150 nm. Due to the low growth temperature, the two-dimensional layer-by-layer growth mode dominates during the epitaxial process, which is a key factor for the growth of high quality strained Ge films.

Key words: strained Ge SiGe virtual substrate RPCVD UHVCVD

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    Received: 18 August 2015 Revised: 03 May 2009 Online: Published: 01 September 2009

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      Guo Lei, Zhao Shuo, Wang Jing, Liu Zhihong, Xu Jun. Fabrication of strained Ge film using a thin SiGe virtual substrate[J]. Journal of Semiconductors, 2009, 30(9): 093005. doi: 10.1088/1674-4926/30/9/093005 Guo L, Zhao S, Wang J, Liu Z H, Xu J. Fabrication of strained Ge film using a thin SiGe virtual substrate[J]. J. Semicond., 2009, 30(9): 093005. doi:  10.1088/1674-4926/30/9/093005.Export: BibTex EndNote
      Citation:
      Guo Lei, Zhao Shuo, Wang Jing, Liu Zhihong, Xu Jun. Fabrication of strained Ge film using a thin SiGe virtual substrate[J]. Journal of Semiconductors, 2009, 30(9): 093005. doi: 10.1088/1674-4926/30/9/093005

      Guo L, Zhao S, Wang J, Liu Z H, Xu J. Fabrication of strained Ge film using a thin SiGe virtual substrate[J]. J. Semicond., 2009, 30(9): 093005. doi:  10.1088/1674-4926/30/9/093005.
      Export: BibTex EndNote

      Fabrication of strained Ge film using a thin SiGe virtual substrate

      doi: 10.1088/1674-4926/30/9/093005
      • Received Date: 2015-08-18
      • Accepted Date: 2009-04-11
      • Revised Date: 2009-05-03
      • Published Date: 2009-08-28

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