SEMICONDUCTOR MATERIALS

Epitaxial growth on 4H-SiC by TCS as a silicon precursor

Ji Gang, Sun Guosheng, Liu Xingfang, Wang Lei, Zhao Wanshun, Zeng Yiping and Li Jinmin

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Abstract: Epitaxial growth on n-type 4H-SiC 8° off-oriented substrates with a size of 10 × 10 mm2 at different temperatures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10 μm2. The homoepitaxial layer was obtained at 1500 ℃ with low growth rate (< 5 μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60–70 μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.

Key words: 4H-SiC TCS epitaxial growth growth rate

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    Received: 18 August 2015 Revised: 14 April 2009 Online: Published: 01 September 2009

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      Ji Gang, Sun Guosheng, Liu Xingfang, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. Journal of Semiconductors, 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006 Ji G, Sun G S, Liu X F, Wang L, Zhao W S, Zeng Y P, Li J M. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. J. Semicond., 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006.Export: BibTex EndNote
      Citation:
      Ji Gang, Sun Guosheng, Liu Xingfang, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. Journal of Semiconductors, 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006

      Ji G, Sun G S, Liu X F, Wang L, Zhao W S, Zeng Y P, Li J M. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. J. Semicond., 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006.
      Export: BibTex EndNote

      Epitaxial growth on 4H-SiC by TCS as a silicon precursor

      doi: 10.1088/1674-4926/30/9/093006
      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-25
      • Revised Date: 2009-04-14
      • Published Date: 2009-08-28

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