| Citation: |
Lu Shuojin, Liu Mengxin, Han Zhengsheng. Influence of body contact of SOI MOSFETs on the thermal conductance of devices[J]. Journal of Semiconductors, 2009, 30(9): 094001. doi: 10.1088/1674-4926/30/9/094001
Lu S J, Liu M X, Han Z S. Influence of body contact of SOI MOSFETs on the thermal conductance of devices[J]. J. Semicond., 2009, 30(9): 094001. doi: 10.1088/1674-4926/30/9/094001.
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Influence of body contact of SOI MOSFETs on the thermal conductance of devices
doi: 10.1088/1674-4926/30/9/094001
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Abstract
The thermal conductance of devices with different body contacts is studied. A new analytical expression is proposed. This expression can be used in parameter extraction, which gives both good efficiency and high precision. The ratio of thermal conductance of the body contact region to that of the body region is nearly equal to the ratio of the area. The use of an H shape gate body contact is suggested to aid power dissipation in SOI MOSFETs. -
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