SEMICONDUCTOR PHYSICS

Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals

Peng Yinsheng, Ye Xiaoling, Xu Bo, Jin Peng, Niu Jiebin, Jia Rui and Wang Zhanguo

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Abstract: This paper mainly describes fabrication of two-dimensional GaAs-based photonic crystals with low nanometer scale air-hole arrays using an inductively coupled plasma (ICP) etching system. The sidewall profile and surface characteristics of the photonic crystals are systematically investigated as a function of process parameters including ICP power, RF power and pressure. Various ICP powers have no significant effect on the verticality of air-hole sidewall and surface smoothness. In contrast, RF power and chamber pressure play a remarkable role in improving sidewall verticality and surface characteristics of photonic crystals indicating different etching mechanisms for low nanometer scale photonic crystals. The desired photonic crystals have been achieved with hole diameters as low as 130 nm with smooth and vertical profiles by developing a suitable ICP processes. The influence of the ICP parameters on this device system are analyzed mainly by scanning electron microscopy. This fabrication approach is not limited to GaAs material, and may be efficiently applied to the development of most two-dimensional photonic crystal slabs.

Key words: photonic crystal GaAs inductively coupled plasma etching scanning electron microscopy

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    Received: 18 August 2015 Revised: 18 August 2009 Online: Published: 01 January 2010

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      Peng Yinsheng, Ye Xiaoling, Xu Bo, Jin Peng, Niu Jiebin, Jia Rui, Wang Zhanguo. Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals[J]. Journal of Semiconductors, 2010, 31(1): 012003. doi: 10.1088/1674-4926/31/1/012003 Peng Y S, Ye X L, Xu B, Jin P, Niu J B, Jia R, Wang Z G. Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals[J]. J. Semicond., 2010, 31(1): 012003. doi: 10.1088/1674-4926/31/1/012003.Export: BibTex EndNote
      Citation:
      Peng Yinsheng, Ye Xiaoling, Xu Bo, Jin Peng, Niu Jiebin, Jia Rui, Wang Zhanguo. Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals[J]. Journal of Semiconductors, 2010, 31(1): 012003. doi: 10.1088/1674-4926/31/1/012003

      Peng Y S, Ye X L, Xu B, Jin P, Niu J B, Jia R, Wang Z G. Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals[J]. J. Semicond., 2010, 31(1): 012003. doi: 10.1088/1674-4926/31/1/012003.
      Export: BibTex EndNote

      Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals

      doi: 10.1088/1674-4926/31/1/012003
      • Received Date: 2015-08-18
      • Accepted Date: 2009-07-15
      • Revised Date: 2009-08-18
      • Published Date: 2009-12-29

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