SEMICONDUCTOR INTEGRATED CIRCUITS

A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

Wu Chia-Song1, , Chang Chien-Huang1, Liu Hsing-Chung1, Lin Tah-Yeong1 and Wu Hsien-Ming2

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Abstract: This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5–40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a Vds of 2 V and a Vgs of –0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.

Key words: LNA,CPW, GaAs pHEMT

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    Received: 18 August 2015 Revised: 23 July 2009 Online: Published: 01 January 2010

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      Wu Chia-Song, Chang Chien-Huang, Liu Hsing-Chung, Lin Tah-Yeong, Wu Hsien-Ming. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology[J]. Journal of Semiconductors, 2010, 31(1): 015005. doi: 10.1088/1674-4926/31/1/015005 Wu C S, Chang C H, Liu H C, Lin T Y, Wu H M. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology[J]. J. Semicond., 2010, 31(1): 015005. doi:  10.1088/1674-4926/31/1/015005.Export: BibTex EndNote
      Citation:
      Wu Chia-Song, Chang Chien-Huang, Liu Hsing-Chung, Lin Tah-Yeong, Wu Hsien-Ming. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology[J]. Journal of Semiconductors, 2010, 31(1): 015005. doi: 10.1088/1674-4926/31/1/015005

      Wu C S, Chang C H, Liu H C, Lin T Y, Wu H M. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology[J]. J. Semicond., 2010, 31(1): 015005. doi:  10.1088/1674-4926/31/1/015005.
      Export: BibTex EndNote

      A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

      doi: 10.1088/1674-4926/31/1/015005
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      • Received Date: 2015-08-18
      • Accepted Date: 2009-04-20
      • Revised Date: 2009-07-23
      • Published Date: 2009-12-29

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