SEMICONDUCTOR INTEGRATED CIRCUITS

A novel precision curvature-compensated bandgap reference

Zhou Zekun, Ming Xin, Zhang Bo and Li Zhaoji

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Abstract: A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to VTlnT realized by utilizing voltage to current converters and the voltage current characteristics of a base–emitter junction, is presented. Experiment results of the proposed bandgap reference implemented with the CSMC 0.5-μm CMOS process demonstrate that a temperature coefficient of 3.9 ppm/℃ is realized at 3.6 V power supply, a power supply rejection ratio of 72 dB is achieved, and the line regulation is better than 0.304 mV/V dissipating a maximum supply current of 42 μA.

Key words: high-order curvature compensation CMOS bandgap reference temperature coefficient PSRR

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    Received: 18 August 2015 Revised: 26 August 2009 Online: Published: 01 January 2010

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      Zhou Zekun, Ming Xin, Zhang Bo, Li Zhaoji. A novel precision curvature-compensated bandgap reference[J]. Journal of Semiconductors, 2010, 31(1): 015010. doi: 10.1088/1674-4926/31/1/015010 Zhou Z K, Ming X, Zhang B, Li Z J. A novel precision curvature-compensated bandgap reference[J]. J. Semicond., 2010, 31(1): 015010. doi:  10.1088/1674-4926/31/1/015010.Export: BibTex EndNote
      Citation:
      Zhou Zekun, Ming Xin, Zhang Bo, Li Zhaoji. A novel precision curvature-compensated bandgap reference[J]. Journal of Semiconductors, 2010, 31(1): 015010. doi: 10.1088/1674-4926/31/1/015010

      Zhou Z K, Ming X, Zhang B, Li Z J. A novel precision curvature-compensated bandgap reference[J]. J. Semicond., 2010, 31(1): 015010. doi:  10.1088/1674-4926/31/1/015010.
      Export: BibTex EndNote

      A novel precision curvature-compensated bandgap reference

      doi: 10.1088/1674-4926/31/1/015010
      • Received Date: 2015-08-18
      • Accepted Date: 2009-05-27
      • Revised Date: 2009-08-26
      • Published Date: 2009-12-29

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