J. Semicond. > 2010, Volume 31 > Issue 11 > 114008, doi: 10.1088/1674-4926/31/11/114008
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SEMICONDUCTOR DEVICES

A novel TFS-IGBT with a super junction floating layer

Ye Jun, Fu Daping, Luo Bo, Zhao Yuanyuan, Qiao Ming and Zhang Bo

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Abstract: A novel trench field stop (TFS) IGBT with a super junction (SJ) floating layer (SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage (> 1200 V), low on-state voltage drop and fast turn-off capability. A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution, which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state/switching state for the SJ TFS-IGBT. A low on-state voltage (VF) and a high breakdown voltage (BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance. A low turn-off loss can be achieved by decreasing the concentration of the P-anode. Simulation results show that the BV is enhanced by 100 V, VF is decreased by 0.33 V (at 100 A/cm2) and the turn-off time is shortened by 60%, compared with conventional TFS-IGBTs.

Key words: IGBT,  Super Junction (SJ),  on-state voltage,  breakdown voltage,  energy loss,  charge balance

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    Received: 18 August 2015 Revised: 20 May 2010 Online: Published: 01 November 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(11): 114008
      Ye Jun, Fu Daping, Luo Bo, Zhao Yuanyuan, Qiao Ming, Zhang Bo. A novel TFS-IGBT with a super junction floating layer[J]. Journal of Semiconductors, 2010, 31(11): 114008. doi: 10.1088/1674-4926/31/11/114008 Ye J, Fu D P, Luo B, Zhao Y Y, Qiao M, Zhang B. A novel TFS-IGBT with a super junction floating layer[J]. J. Semicond., 2010, 31(11): 114008. doi: 10.1088/1674-4926/31/11/114008.Export: BibTex EndNote
      Citation:
      Ye Jun, Fu Daping, Luo Bo, Zhao Yuanyuan, Qiao Ming, Zhang Bo. A novel TFS-IGBT with a super junction floating layer[J]. Journal of Semiconductors, 2010, 31(11): 114008. doi: 10.1088/1674-4926/31/11/114008

      Ye J, Fu D P, Luo B, Zhao Y Y, Qiao M, Zhang B. A novel TFS-IGBT with a super junction floating layer[J]. J. Semicond., 2010, 31(11): 114008. doi: 10.1088/1674-4926/31/11/114008.
      Export: BibTex EndNote
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      A novel TFS-IGBT with a super junction floating layer

      doi: 10.1088/1674-4926/31/11/114008

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • Received Date: 2015-08-18
      • Accepted Date: 2010-05-20
      • Revised Date: 2010-05-20
      • Published Date: 2010-10-31

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