SEMICONDUCTOR MATERIALS

Origin of varistor properties of tungsten trioxide (WO3) ceramics

Zhao Hongwang, Hua Zhongqiu, Li Tongye, Wang Yu and Zhao Yong

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Abstract: To study the physical origin of the non-ohmic behavior of WO3 ceramics, the effects of heat treatmentin different atmospheres on WO3 varistors were investigated. Experiments showed that there was a dependence of the nonlinear coefficient on thermal treatment under different atmospheres. Thermal treatments in argon and oxygen atmospheres at 900 ℃ proved this dependence, and indicated that the nonlinear coefficient got significantly lower when the samples were thermally treated under argon atmosphere. Subsequent exposure to oxygen atmosphere at the same temperature led to the restoration of electrical properties. The result shows that the physical origin of the non-ohmic behavior of WO3 ceramics is oxygen on the grain surfaces adsorbed by intrinsic defects.

Key words: varistor tungstentrioxide thermaltreatment intrinsicdefects

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    Received: 18 August 2015 Revised: 13 October 2009 Online: Published: 01 February 2010

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      Zhao Hongwang, Hua Zhongqiu, Li Tongye, Wang Yu, Zhao Yong. Origin of varistor properties of tungsten trioxide (WO3) ceramics[J]. Journal of Semiconductors, 2010, 31(2): 023001. doi: 10.1088/1674-4926/31/2/023001 Zhao H W, Hua Z Q, Li T Y, Wang Y, Zhao Y. Origin of varistor properties of tungsten trioxide (WO3) ceramics[J]. J. Semicond., 2010, 31(2): 023001. doi:  10.1088/1674-4926/31/2/023001.Export: BibTex EndNote
      Citation:
      Zhao Hongwang, Hua Zhongqiu, Li Tongye, Wang Yu, Zhao Yong. Origin of varistor properties of tungsten trioxide (WO3) ceramics[J]. Journal of Semiconductors, 2010, 31(2): 023001. doi: 10.1088/1674-4926/31/2/023001

      Zhao H W, Hua Z Q, Li T Y, Wang Y, Zhao Y. Origin of varistor properties of tungsten trioxide (WO3) ceramics[J]. J. Semicond., 2010, 31(2): 023001. doi:  10.1088/1674-4926/31/2/023001.
      Export: BibTex EndNote

      Origin of varistor properties of tungsten trioxide (WO3) ceramics

      doi: 10.1088/1674-4926/31/2/023001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-08-07
      • Revised Date: 2009-10-13
      • Published Date: 2010-01-27

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