SEMICONDUCTOR DEVICES

Double gate lateral IGBT on partial membrane

Luo Xiaorong, Lei Lei, Zhang Wei, Zhang Bo and Li Zhaoji

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Abstract: A new SOI LIGBT (lateral insulated-gate bipolar transistor) with cathode- and anode-gates on partial membrane is proposed. A low on-state resistance is achieved when a negative voltage is applied to the anode gate. In the blocking state, the cathode gate is shortened to the cathode and the anode gate is shortened to the anode, leading to a fast switching speed. Moreover, the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide, which releases potential lines below the membrane, yielding an enhanced breakdown voltage (BV). Furthermore, a high switching speed is obtained due to the absence of the drain–substrate capacitance. Lastly, a combination of uniformity and variation in lateral doping profiles helps to achieve a high BV and low special on-resistance. Compared with a conventional LIGBT, the proposed structure exhibits high current capability, low special on-resistance, and double the BV.

Key words: SOI

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    Received: 18 August 2015 Revised: 06 October 2009 Online: Published: 01 February 2010

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      Luo Xiaorong, Lei Lei, Zhang Wei, Zhang Bo, Li Zhaoji. Double gate lateral IGBT on partial membrane[J]. Journal of Semiconductors, 2010, 31(2): 024002. doi: 10.1088/1674-4926/31/2/024002 Luo X R, Lei L, Zhang W, Zhang B, Li Z J. Double gate lateral IGBT on partial membrane[J]. J. Semicond., 2010, 31(2): 024002. doi: 10.1088/1674-4926/31/2/024002.Export: BibTex EndNote
      Citation:
      Luo Xiaorong, Lei Lei, Zhang Wei, Zhang Bo, Li Zhaoji. Double gate lateral IGBT on partial membrane[J]. Journal of Semiconductors, 2010, 31(2): 024002. doi: 10.1088/1674-4926/31/2/024002

      Luo X R, Lei L, Zhang W, Zhang B, Li Z J. Double gate lateral IGBT on partial membrane[J]. J. Semicond., 2010, 31(2): 024002. doi: 10.1088/1674-4926/31/2/024002.
      Export: BibTex EndNote

      Double gate lateral IGBT on partial membrane

      doi: 10.1088/1674-4926/31/2/024002
      • Received Date: 2015-08-18
      • Accepted Date: 2009-07-29
      • Revised Date: 2009-10-06
      • Published Date: 2010-01-27

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