SEMICONDUCTOR INTEGRATED CIRCUITS

A 4 W K-band GaAs MMIC power amplifier with 22 dB gain

Huang Zhengliang, Yu Faxin and Zheng Yao

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Abstract: A 4 W K-band AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA) is reported. This amplifier is designed to fully match for a 50 Ω input and output impedance based on the 0.15 μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss, and 36 dBm saturation power with 25% PAE from 19 to 22 GHz.

Key words: K-band power amplifier MMIC PHEMT

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    Received: 18 August 2015 Revised: 19 October 2009 Online: Published: 01 March 2010

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      Huang Zhengliang, Yu Faxin, Zheng Yao. A 4 W K-band GaAs MMIC power amplifier with 22 dB gain[J]. Journal of Semiconductors, 2010, 31(3): 035001. doi: 10.1088/1674-4926/31/3/035001 Huang Z L, Yu F X, Zheng Y. A 4 W K-band GaAs MMIC power amplifier with 22 dB gain[J]. J. Semicond., 2010, 31(3): 035001. doi: 10.1088/1674-4926/31/3/035001.Export: BibTex EndNote
      Citation:
      Huang Zhengliang, Yu Faxin, Zheng Yao. A 4 W K-band GaAs MMIC power amplifier with 22 dB gain[J]. Journal of Semiconductors, 2010, 31(3): 035001. doi: 10.1088/1674-4926/31/3/035001

      Huang Z L, Yu F X, Zheng Y. A 4 W K-band GaAs MMIC power amplifier with 22 dB gain[J]. J. Semicond., 2010, 31(3): 035001. doi: 10.1088/1674-4926/31/3/035001.
      Export: BibTex EndNote

      A 4 W K-band GaAs MMIC power amplifier with 22 dB gain

      doi: 10.1088/1674-4926/31/3/035001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-09-04
      • Revised Date: 2009-10-19
      • Published Date: 2010-02-08

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