Abstract: The exponential dependence of the potential barrier height f_c on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of f_c on the applied biases can be used to derive the I–V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of f_c can contribute effectively to reduce the error between the theoretical and experimental results of the I–V characteristics.  

Key words: SIT,  OSIT,  potential barrier height,  normalized approach,  I –V characteristics