| Citation: |
Gao Bo, Yu Xuefeng, Ren Diyuan, Liu Gang, Wang Yiyuan, Sun Jing, Cui Jiangwei. Total ionizing dose effects and annealing behavior for domestic VDMOS devices[J]. Journal of Semiconductors, 2010, 31(4): 044007. doi: 10.1088/1674-4926/31/4/044007
Gao B, Yu X F, Ren D Y, Liu G, Wang Y Y, Sun J, Cui J W. Total ionizing dose effects and annealing behavior for domestic VDMOS devices[J]. J. Semicond., 2010, 31(4): 044007. doi: 10.1088/1674-4926/31/4/044007.
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Total ionizing dose effects and annealing behavior for domestic VDMOS devices
doi: 10.1088/1674-4926/31/4/044007
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Abstract
Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that: the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 ℃ annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a “rebound” effect; there is a latent interface-trap buildup (LITB) phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.-
Keywords:
- VDMOS device,
- total dose effects,
- annealing,
- γ radiation
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References
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