SEMICONDUCTOR INTEGRATED CIRCUITS

A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

Salahddine Krit, Hassan Qjidaa, Imad El Affar, Yafrah Khadija, Ziani Messghati and Yassir El-Ghzizal

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Abstract: This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q–V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs.This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-μm CMOS technology and operates with a 2.7 to 3.6 V supply voltage. It has an area of 0.4 mm2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.

Key words: switch capacitor charge pump

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    Received: 18 August 2015 Revised: 29 December 2009 Online: Published: 01 April 2010

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      Salahddine Krit, Hassan Qjidaa, Imad El Affar, Yafrah Khadija, Ziani Messghati, Yassir El-Ghzizal. A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems[J]. Journal of Semiconductors, 2010, 31(4): 045001. doi: 10.1088/1674-4926/31/4/045001 S Krit, H Qjidaa, I E Affar, Y Khadija, Z Messghati, Y El-Ghzizal. A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems[J]. J. Semicond., 2010, 31(4): 045001. doi:  10.1088/1674-4926/31/4/045001.Export: BibTex EndNote
      Citation:
      Salahddine Krit, Hassan Qjidaa, Imad El Affar, Yafrah Khadija, Ziani Messghati, Yassir El-Ghzizal. A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems[J]. Journal of Semiconductors, 2010, 31(4): 045001. doi: 10.1088/1674-4926/31/4/045001

      S Krit, H Qjidaa, I E Affar, Y Khadija, Z Messghati, Y El-Ghzizal. A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems[J]. J. Semicond., 2010, 31(4): 045001. doi:  10.1088/1674-4926/31/4/045001.
      Export: BibTex EndNote

      A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

      doi: 10.1088/1674-4926/31/4/045001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-11-25
      • Revised Date: 2009-12-29
      • Published Date: 2010-03-29

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