| Citation: |
Gao Hanchao, Wen Cai, Wang Wenxin, Jiang Zhongwei, Tian Haitao, He Tao, Li Hui, Chen Hong. AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer[J]. Journal of Semiconductors, 2010, 31(5): 053003. doi: 10.1088/1674-4926/31/5/053003
Gao H C, Wen C, Wang W X, Jiang Z W, Tian H T, He T, Li H, Chen H. AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer[J]. J. Semicond., 2010, 31(5): 053003. doi: 10.1088/1674-4926/31/5/053003.
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AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer
doi: 10.1088/1674-4926/31/5/053003
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Abstract
Five-period AlGaSb/GaSb multiple quantum wells (MQW) are grown on a GaSb buffer. Through optimizing the AlSb nucleation layer, the low threading dislocation density of the MQW is found to be (2.50±0.91)E8 cm-2 in 1- μm GaSb buffer, as determined by plan-view transmission election microscopy (TEM) images. High reso-lution TEM clearly shows the presence of 90° misfit dislocations with an average spacing of 5.4 nm at the AlSb/GaAs interface, which effectively relieve most of the strain energy. In the temperature range from T D 26 K to 300 K, photoluminescence of the MQW is dominated by the ground state electron to ground state heavy hole (e1–hh1) transition, while a high energy shoulder clearly seen at T > 76 K can be attributed to the ground state electron to ground state light hole (e1–lh1) transition. -
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