| Citation: |
Chen Lei, Ruan Ying, Ma Heliang, Lai Zongsheng. A 2.1–6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver[J]. Journal of Semiconductors, 2010, 31(5): 055001. doi: 10.1088/1674-4926/31/5/055001
Chen L, Ruan Y, Ma H L, Lai Z S. A 2.1–6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver[J]. J. Semicond., 2010, 31(5): 055001. doi: 10.1088/1674-4926/31/5/055001.
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A 2.1–6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver
doi: 10.1088/1674-4926/31/5/055001
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Abstract
A wideband low-noise amplifier (LNA) with ESD protection for a multi-mode receiver is presented. The LNA is fabricated in a 0.18-μm SiGe BiCMOS process, covering the 2.1 to 6 GHz frequency band. After optimized noise modeling and circuit design, the measured results show that the LNA has a 12 dB gain over the entire bandwidth, the input third intercept point (IIP3) is –8 dBm at 6 GHz, and the noise figure is from 2.3 to 3.8 dB in the operating band. The overall power consumption is 8 mW at 2.5 V voltage supply.-
Keywords:
- SiGe
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References
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