SEMICONDUCTOR TECHNOLOGY

SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

Shang Haiping and Xu Qiuxia

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Abstract: Bymeans of analyzing the I–V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (φB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on theφB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of φB, eff and RNiSi are discussed.

Key words: NiSi/n-Si SJD effective Schottky barrier height dopant segregation process

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    Received: 18 August 2015 Revised: 07 January 2010 Online: Published: 01 May 2010

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      Shang Haiping, Xu Qiuxia. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. Journal of Semiconductors, 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001 Shang H P, Xu Q X. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. J. Semicond., 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001.Export: BibTex EndNote
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      Shang Haiping, Xu Qiuxia. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. Journal of Semiconductors, 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001

      Shang H P, Xu Q X. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. J. Semicond., 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001.
      Export: BibTex EndNote

      SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

      doi: 10.1088/1674-4926/31/5/056001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-12-16
      • Revised Date: 2010-01-07
      • Published Date: 2010-05-06

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