| Citation: |
Su Jianxiu, Chen Xiqu, Du Jiaxi, Kang Renke. Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories[J]. Journal of Semiconductors, 2010, 31(5): 056002. doi: 10.1088/1674-4926/31/5/056002
Su J X, Chen X Q, Du J X, Kang R K. Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories[J]. J. Semicond., 2010, 31(5): 056002. doi: 10.1088/1674-4926/31/5/056002.
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Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories
doi: 10.1088/1674-4926/31/5/056002
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Abstract
Distribution forms of abrasives in the chemical mechanical polishing (CMP) process are analyzed based on experimental results. Then the relationships between the wafer, the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics. According to the track length of abrasives on the wafer surface, the relationships between the material removal rate and the polishing velocity are obtained. The analysis results are in accord with the experimental results. The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP. -
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