J. Semicond. > 2010, Volume 31 > Issue 6 > 065016, doi: 10.1088/1674-4926/31/6/065016

SEMICONDUCTOR INTEGRATED CIRCUITS

All-CMOS temperature compensated current reference

Zhao Zhe, Zhou Feng and Huang Shengzhuan

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Abstract: This paper presents a novel temperature independent current reference based on the theory of mutual compensation of mobility and threshold voltage. It is completely compatible with standard CMOS-technology. The experiment results indicate that the temperature coefficient of this current reference is less than 290 ppm/ C over a temperature range from –20 to 110 ℃.

Key words: CMOS integrated circuits

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    Received: 18 August 2015 Revised: 04 February 2010 Online: Published: 01 June 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(6): 065016
      Zhao Zhe, Zhou Feng, Huang Shengzhuan. All-CMOS temperature compensated current reference[J]. Journal of Semiconductors, 2010, 31(6): 065016. doi: 10.1088/1674-4926/31/6/065016 Zhao Z, Zhou F, Huang S Z. All-CMOS temperature compensated current reference[J]. J. Semicond., 2010, 31(6): 065016. doi: 10.1088/1674-4926/31/6/065016.Export: BibTex EndNote
      Citation:
      Zhao Zhe, Zhou Feng, Huang Shengzhuan. All-CMOS temperature compensated current reference[J]. Journal of Semiconductors, 2010, 31(6): 065016. doi: 10.1088/1674-4926/31/6/065016

      Zhao Z, Zhou F, Huang S Z. All-CMOS temperature compensated current reference[J]. J. Semicond., 2010, 31(6): 065016. doi: 10.1088/1674-4926/31/6/065016.
      Export: BibTex EndNote
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      All-CMOS temperature compensated current reference

      doi: 10.1088/1674-4926/31/6/065016

      • State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China

      • State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China

      • State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-11-23
      • Revised Date: 2010-02-04
      • Published Date: 2010-06-03

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