A revised approach to Schottky parameter extraction for GaN HEMT

Wang Xinhua; Zhao Miao; Liu Xinyu; Zheng Yingkui; Wei Ke

doi:10.1088/1674-4926/31/7/074005

Article Navigation > Journal of Semiconductors > 2010 > 31(7): 074005

Wang Xinhua, Zhao Miao, Liu Xinyu, Zheng Yingkui, Wei Ke. A revised approach to Schottky parameter extraction for GaN HEMT[J]. Journal of Semiconductors, 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005 Wang X H, Zhao M, Liu X Y, Zheng Y K, Wei K. A revised approach to Schottky parameter extraction for GaN HEMT[J]. J. Semicond., 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005.Export: BibTex EndNote

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Wang Xinhua, Zhao Miao, Liu Xinyu, Zheng Yingkui, Wei Ke. A revised approach to Schottky parameter extraction for GaN HEMT[J]. Journal of Semiconductors, 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005

Wang X H, Zhao M, Liu X Y, Zheng Y K, Wei K. A revised approach to Schottky parameter extraction for GaN HEMT[J]. J. Semicond., 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005.

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Wang X H, Zhao M, Liu X Y, Zheng Y K, Wei K. A revised approach to Schottky parameter extraction for GaN HEMT[J]. J. Semicond., 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005.

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A revised approach to Schottky parameter extraction for GaN HEMT

doi: 10.1088/1674-4926/31/7/074005

Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received Date: 2015-08-18
Accepted Date: 2010-01-20
Revised Date: 2010-02-24
Published Date: 2010-07-05

Abstract

Abstract

We carry out a thermal storage research on GaN HEMT at 350 ^oC for 48 h, and a recess phenomenon is observed in the low voltage section of Schottky forward characteristics. The decrease of 2DEG density will be responsible for the recess phenomenon. Because the conventional method is not suitable for this kind of curve, a revised approach is presented by analyzing the back-to-back Schottky junction energy band to extract Schottky parameters, which leads to a consistent fit effect.
- AlGaN/GaN HEMT

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A revised approach to Schottky parameter extraction for GaN HEMT

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