| Citation: |
Huang Jie, Guo Tianyi, Zhang Haiying, Xu Jingbo, Fu Xiaojun, Yang Hao, Niu Jiebin. 120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT[J]. Journal of Semiconductors, 2010, 31(7): 074008. doi: 10.1088/1674-4926/31/7/074008
Huang J, Guo T Y, Zhang H Y, Xu J B, Fu X J, Yang H, Niu J B. 120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT[J]. J. Semicond., 2010, 31(7): 074008. doi: 10.1088/1674-4926/31/7/074008.
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120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT
doi: 10.1088/1674-4926/31/7/074008
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Abstract
120 nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based high electron mobility transitions (HEMTs) are fabricated by a new T-shaped gate electron beam lithograph (EBL) technology, which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack. These devices also demonstrate excellent DC and RF characteristics: the transconductance, maximum saturation drain-to-source current, threshold voltage, maximum current gain frequency, and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm, 446 mA/mm, -1.0 V, 141 GHz and 120 GHz, respectively. The material structure and all the device fabrication technology in this work were developed by our group.-
Keywords:
- HEMT,
- InP,
- InGaAs/InAlAs
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