| Citation: |
Wang Ying, Han Weihua, Yang Xiang, Zhang Renping, Zhang Yang, Yang Fuhua. An efficient dose-compensation method for proximity effect correction[J]. Journal of Semiconductors, 2010, 31(8): 086001. doi: 10.1088/1674-4926/31/8/086001
Wang Y, Han W H, Yang X, Zhang R P, Zhang Y, Yang F H. An efficient dose-compensation method for proximity effect correction[J]. J. Semicond., 2010, 31(8): 086001. doi: 10.1088/1674-4926/31/8/086001.
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An efficient dose-compensation method for proximity effect correction
doi: 10.1088/1674-4926/31/8/086001
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Abstract
A novel simple dose-compensation method is developed for proximity effect correction in electron-beam lithography. The sizes of exposed patterns depend on dose factors while other exposure parameters (including accelerate voltage, resist thickness, exposing step size, substrate material, and so on) remain constant. This method is based on two reasonable assumptions in the evaluation of the compensated dose factor: one is that the relation between dose factors and circle-diameters is linear in the range under consideration; the other is that the compensated dose factor is only affected by the nearest neighbors for simplicity. Four-layer-hexagon photonic crystal structures were fabricated as test patterns to demonstrate this method. Compared to the uncorrected structures, the homogeneity of the corrected hole-size in photonic crystal structures was clearly improved. -
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