| Citation: |
Bu Jianhui, Bi Jinshun, Xi Linmao, Han Zhengsheng. Deep submicron PDSOI thermal resistance extraction[J]. Journal of Semiconductors, 2010, 31(9): 094001. doi: 10.1088/1674-4926/31/9/094001
Bu J H, Bi J S, Xi L M, Han Z S. Deep submicron PDSOI thermal resistance extraction[J]. J. Semicond., 2010, 31(9): 094001. doi: 10.1088/1674-4926/31/9/094001.
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Deep submicron PDSOI thermal resistance extraction
doi: 10.1088/1674-4926/31/9/094001
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Abstract
Deep submicron partially depleted silicon on insulator (PDSOI) MOSFETs with H-gate were fabricated based on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect (SHE) has a great influence on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction.-
Keywords:
- thermal resistance,
- self heating effect,
- PDSOI
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References
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Proportional views
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