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Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer

Lu Shenghui, Du Jiangfeng, Luo Qian, Yu Qi, Zhou Wei, Xia Jianxin and Yang Mohua

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Abstract: An analytical charge control model considering the insulator/AlGaN interface charge and undepleted AlGaN barrier layer is presented for AlGaN/GaN metal–insulator–semiconductor heterostructure field effect transistors (MIS-HFETs) over the entire operation range of gate voltage. The whole process of charge control is analyzed in detail and partitioned into four regions: I—full depletion, II—partial depletion, III—neutral region and IV—electron accumulation at the insulator/AlGaN interface. The results show that two-dimensional electron gas (2DEG) saturates at the boundary of region II/III and the gate voltage should not exceed the 2DEG saturation voltage in order to keep the channel in control. In addition, the span of region II accounts for about 50% of the range of gate voltage before 2DEG saturates. The good agreement of the calculated transfer characteristic with the measured data confirms the validity of the proposed model.

Key words: AlGaN/GaNMIS-HFET2DEGanalytical charge control model

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2010

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      Lu Shenghui, Du Jiangfeng, Luo Qian, Yu Qi, Zhou Wei, Xia Jianxin, Yang Mohua. Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer[J]. Journal of Semiconductors, 2010, 31(9): 094004. doi: 10.1088/1674-4926/31/9/094004 Lu S H, Du J F, Luo Q, Yu Q, Zhou W, Xia J X, Yang M H. Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer[J]. J. Semicond., 2010, 31(9): 094004. doi: 10.1088/1674-4926/31/9/094004.Export: BibTex EndNote
      Citation:
      Lu Shenghui, Du Jiangfeng, Luo Qian, Yu Qi, Zhou Wei, Xia Jianxin, Yang Mohua. Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer[J]. Journal of Semiconductors, 2010, 31(9): 094004. doi: 10.1088/1674-4926/31/9/094004

      Lu S H, Du J F, Luo Q, Yu Q, Zhou W, Xia J X, Yang M H. Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer[J]. J. Semicond., 2010, 31(9): 094004. doi: 10.1088/1674-4926/31/9/094004.
      Export: BibTex EndNote

      Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer

      doi: 10.1088/1674-4926/31/9/094004
      • Received Date: 2015-08-18

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