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Numerical study of the sub-threshold slope in T-CNFETs

Zhou Hailiang, Hao Yue and Zhang Minxuan

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Abstract: The most attractive merit of tunneling carbon nanotube field effect transistors (T-CNFETs) is the ultra-small inverse sub-threshold slope. In order to obtain as small an average sub-threshold slope as possible, several effective approaches have been proposed based on a numerical insight into the working mechanism of T-CNFETs: tuning the doping level of source/drain leads, minimizing the quantum capacitance value via tuning the bias condition or increasing the insulator capacitance, and adopting a staircase doping strategy in the drain lead. Non-equilibrium Green's function based simulation results show that all these approaches can contribute to a smaller average inverse sub-threshold slope, which is quite desirable in high-frequency or low-power applications.

Key words: sub-threshold slopeT-CNFETsquantum capacitanceBTBTNEGF

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2010

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      Zhou Hailiang, Hao Yue, Zhang Minxuan. Numerical study of the sub-threshold slope in T-CNFETs[J]. Journal of Semiconductors, 2010, 31(9): 094005. doi: 10.1088/1674-4926/31/9/094005 Zhou H L, Hao Y, Zhang M X. Numerical study of the sub-threshold slope in T-CNFETs[J]. J. Semicond., 2010, 31(9): 094005. doi: 10.1088/1674-4926/31/9/094005.Export: BibTex EndNote
      Citation:
      Zhou Hailiang, Hao Yue, Zhang Minxuan. Numerical study of the sub-threshold slope in T-CNFETs[J]. Journal of Semiconductors, 2010, 31(9): 094005. doi: 10.1088/1674-4926/31/9/094005

      Zhou H L, Hao Y, Zhang M X. Numerical study of the sub-threshold slope in T-CNFETs[J]. J. Semicond., 2010, 31(9): 094005. doi: 10.1088/1674-4926/31/9/094005.
      Export: BibTex EndNote

      Numerical study of the sub-threshold slope in T-CNFETs

      doi: 10.1088/1674-4926/31/9/094005
      • Received Date: 2015-08-18

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