| Citation: |
Zhang Shifeng, Ding Koubao, Han Yan, Han Chenggong, Hu Jiaxian, Zhang Bin. Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices[J]. Journal of Semiconductors, 2010, 31(9): 094006. doi: 10.1088/1674-4926/31/9/094006
Zhang S F, Ding K B, Han Y, Han C G, Hu J X, Zhang B. Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices[J]. J. Semicond., 2010, 31(9): 094006. doi: 10.1088/1674-4926/31/9/094006.
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Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices
doi: 10.1088/1674-4926/31/9/094006
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Abstract
Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented. A constant current pulse stressing test is applied to the device. Two different degradation mechanisms are identified by analysis of electrical data, technology computer-aided design (TCAD) simulations and charge pumping measurements. The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region, and the second one is due to decreased electron mobility upon interface state formation in the drift region. Both of the mechanisms are enhanced with increasing avalanche breakdown current.-
Keywords:
- NLDMOS,
- avalanche breakdown,
- degradation,
- charge-pumping
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References
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Proportional views
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