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In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

Wen Feng, Huang Lirong, Jiang Bo, Tong Liangzhu, Xu Wei and Liu Deming

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Abstract: The metal-organic chemical vapor deposition (MOCVD) growth of AlGaN/GaN distributed Bragg reflectors (DBR) with a reflection peak at 530 nm was in situ monitored using 633 nm laser reflectometry. Evolutions of in situ reflected reflectivity for different kinds of AlGaN/GaN DBR were simulated by the classical transfer matrix method. Two DBR samples, which have the same parameters as the simulated structures, were grown by MOCVD. The simulated and experimental results show that it is possible to evaluate the DBR parameters from the envelope shape of the in situ reflectivity spectrum. With the help of the 633 nm laser reflectometry, a DBR light emitting diode (LED) was grown. The room temperature photoluminescence spectra show that the reflection peak of the DBR in the LED is within the design region.

Key words: light emitting diode

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2010

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      Wen Feng, Huang Lirong, Jiang Bo, Tong Liangzhu, Xu Wei, Liu Deming. In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser[J]. Journal of Semiconductors, 2010, 31(9): 094010. doi: 10.1088/1674-4926/31/9/094010 Wen F, Huang L R, Jiang B, Tong L Z, Xu W, Liu D M. In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser[J]. J. Semicond., 2010, 31(9): 094010. doi: 10.1088/1674-4926/31/9/094010.Export: BibTex EndNote
      Citation:
      Wen Feng, Huang Lirong, Jiang Bo, Tong Liangzhu, Xu Wei, Liu Deming. In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser[J]. Journal of Semiconductors, 2010, 31(9): 094010. doi: 10.1088/1674-4926/31/9/094010

      Wen F, Huang L R, Jiang B, Tong L Z, Xu W, Liu D M. In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser[J]. J. Semicond., 2010, 31(9): 094010. doi: 10.1088/1674-4926/31/9/094010.
      Export: BibTex EndNote

      In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

      doi: 10.1088/1674-4926/31/9/094010
      • Received Date: 2015-08-18

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