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A novel high voltage start up circuit for an integrated switched mode power supply

Hu Hao and Chen Xingbi

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Abstract: A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

Key words: high voltage start up circuitfloating p-islandfield ring

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2010

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      Hu Hao, Chen Xingbi. A novel high voltage start up circuit for an integrated switched mode power supply[J]. Journal of Semiconductors, 2010, 31(9): 094012. doi: 10.1088/1674-4926/31/9/094012 Hu H, Chen X B. A novel high voltage start up circuit for an integrated switched mode power supply[J]. J. Semicond., 2010, 31(9): 094012. doi: 10.1088/1674-4926/31/9/094012.Export: BibTex EndNote
      Citation:
      Hu Hao, Chen Xingbi. A novel high voltage start up circuit for an integrated switched mode power supply[J]. Journal of Semiconductors, 2010, 31(9): 094012. doi: 10.1088/1674-4926/31/9/094012

      Hu H, Chen X B. A novel high voltage start up circuit for an integrated switched mode power supply[J]. J. Semicond., 2010, 31(9): 094012. doi: 10.1088/1674-4926/31/9/094012.
      Export: BibTex EndNote

      A novel high voltage start up circuit for an integrated switched mode power supply

      doi: 10.1088/1674-4926/31/9/094012
      • Received Date: 2015-08-18

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