SEMICONDUCTOR INTEGRATED CIRCUITS

A 3–5 GHz BPSK transmitter for IR-UWB in 0.18 μm CMOS

Fu Delong, Huang Lu, Cai Li and Lin Fujiang

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Abstract: This paper presents a transmitter IC with BPSK modulation for an ultra-wide band system. It is based on up-conversion with a high linearity passive mixer. Unlike the traditional BPSK modulation scheme, the local oscillator (LO) is modulated by the baseband data instead of the pulse. The chip is designed and fabricated by standard 0.18 μ m CMOS technology. The transmitter achieves a high data rate up to 400 Mbps. The amplitude of the pulse can be adjusted by the amplitude of the LO and the bias current of the driver amplifier. The maximum peak-to-peak amplitude of the pulse is 600 mV. It consumes only 20.3 mA current with a supply voltage of 1.8 V when transmitting a pulse at the maximum data rate. The energy efficiency is 91.4 pJ/pulse. The die area is 1.4 × 1.4 mm2.

Key words: transmitter

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2010

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      Fu Delong, Huang Lu, Cai Li, Lin Fujiang. A 3–5 GHz BPSK transmitter for IR-UWB in 0.18 μm CMOS[J]. Journal of Semiconductors, 2010, 31(9): 095005. doi: 10.1088/1674-4926/31/9/095005 Fu D L, Huang L, Cai L, Lin F J. A 3–5 GHz BPSK transmitter for IR-UWB in 0.18 μm CMOS[J]. J. Semicond., 2010, 31(9): 095005. doi: 10.1088/1674-4926/31/9/095005.Export: BibTex EndNote
      Citation:
      Fu Delong, Huang Lu, Cai Li, Lin Fujiang. A 3–5 GHz BPSK transmitter for IR-UWB in 0.18 μm CMOS[J]. Journal of Semiconductors, 2010, 31(9): 095005. doi: 10.1088/1674-4926/31/9/095005

      Fu D L, Huang L, Cai L, Lin F J. A 3–5 GHz BPSK transmitter for IR-UWB in 0.18 μm CMOS[J]. J. Semicond., 2010, 31(9): 095005. doi: 10.1088/1674-4926/31/9/095005.
      Export: BibTex EndNote

      A 3–5 GHz BPSK transmitter for IR-UWB in 0.18 μm CMOS

      doi: 10.1088/1674-4926/31/9/095005
      • Received Date: 2015-08-18

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