| Citation: |
Koh Matsumoto, Kazutada Ikenaga, Jun Yamamoto, Kazuki Naito, Yoshiki Yano, Akinori Ubukata, Hiroki Tokunaga, Tadanobu Arimura, Katsuaki Cho, Toshiya Tabuchi, Akira Yamaguchi, Yasuhiro Harada, Yuzaburo Ban, Kousuke Uchiyama. Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth[J]. Journal of Semiconductors, 2011, 32(1): 013003. doi: 10.1088/1674-4926/32/1/013003
K Matsumoto, K Ikenaga, J Yamamoto, K Naito, Y Yano, A Ubukata, H Tokunaga, T Arimura, K Cho, T Tabuchi, A Yamaguchi, Y Harada, Y Ban, K Uchiyama. Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth[J]. J. Semicond., 2011, 32(1): 013003. doi: 10.1088/1674-4926/32/1/013003.
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Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth
doi: 10.1088/1674-4926/32/1/013003
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Abstract
Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10 μm/h and also Al0.1Ga0.9N growth of 1 μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of (002) and (102) direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.-
Keywords:
- MOVPE,
- GaN: AlGaN,
- atmospheric pressure growth,
- high growth rate
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References
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Proportional views
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